Published April 2011 | Version v1
Journal article

Phase equilibria, crystal chemistry, electronic structure and physical properties of Ag-Ba-Ge clathrates

  • 1. Institute of Physical Chemistry, University of Vienna, Waehringerstr. 42, 1090 Wien (Austria)
  • 2. Institute of Solid State Physics, Vienna University of Technology, Wiedner Hauptstr. 8-10, 1040 Wien (Austria)
  • 3. Institute of Mineralogy and Crystallography, University of Vienna, A-1090 Wien (Austria)

Description

In the Ag-Ba-Ge system the clathrate type-Ι solid solution, Ba8AgxGe46-x-y□y, extends at 800 deg. C from binary Ba8Ge43□3 (□ is a vacancy) to Ba8Ag5.3Ge40.7. For the clathrate phase (1 ≤ x ≤ 5.3) the cubic space group Pm3-bar n was established by X-ray powder diffraction and confirmed by X-ray single-crystal analyses of the samples Ba8Ag2.3Ge41.9□1.8 and Ba8Ag4.4Ge41.3□0.3. Increasing the concentration of Ag causes the lattice parameters of the solid solution to increase linearly from a value of a = 1.0656 (x = 0, y = 3) to a = 1.0842 (x = 4.8, y = 0) nm. Site preference determination using X-ray refinement reveals that Ag atoms preferentially occupy the 6d site randomly mixed with Ge and vacancies, which become filled in the compound Ba8Ag4.8Ge41.2 when the Ag content increases. At 600 oC the phase region of the clathrate solution Ba8AgxGe46-x-y□y becomes separated from the Ba-Ge boundary and extends from 6.6 to 9.8 at.% Ag. The compound Ba6Ge25 (clathrate type-ΙX) dissolves at 800 oC a maximum of 1.5 at.% Ag. The homogeneity regions of the two ternary compounds BaAg2-xGe2+x (ThCr2Si2-type, 0.2 ≤ x ≤ 0.7) and Ba(Ag1-xGex)2 (AlB2-type, 0.65 ≤ x ≤ 0.75) were established at 800 deg. C. Studies of transport properties for the series of Ba8AgxGe46-x-y□y compounds evidenced that electrons are the predominant charge carriers with the Fermi energy close to a gap. Its position can be fine-tuned by the substitution of Ge by Ag atoms and by mechanical processing of the starting material, Ba8Ge43. The proximity of the electronic structure at Fermi energy of Ba8AgxGe46-x-y□y to a gap is also corroborated by density functional theory calculations. This gap near the Fermi energy gives rise to distinct features of the temperature-dependent electrical resistivity and the Seebeck effect is in very good agreement with the experiment findings.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.actamat.2010.12.033

Additional details

Identifiers

DOI
10.1016/j.actamat.2010.12.033;
PII
S1359-6454(10)00865-7;

Publishing Information

Journal Title
Acta Materialia
Journal Volume
59
Journal Issue
6
Journal Page Range
p. 2368-2384
ISSN
1359-6454
CODEN
ACMAFD

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.