Published 1987
| Version v1
Book
Modelling and design of high efficiency radiation tolerant indium phosphide space solar cells
Creators
- 1. E.E. Dept., Cleveland State Univ., Cleveland, OH 44115
Description
Using a fairly comprehensive model, the authors did a parametric variation study of the InP shallow homojunction solar cell with a view to determining the maximum realistically achievable efficiency and an optimum design that would yield this efficiency. Their calculations show that with good quality epitaxial material, a BOL efficiency of about 20.3% at 1AMO, 250C may be possible. The design parameters of the near-optimum cell are given. Also presented are the expected radiation damage of the performance parameters by 1MeV electrons and a possible explanation of the high radiation tolerance of InP solar cells
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- Nineteenth IEEE photovoltaic specialists conference, 1987. (Conference Record)
- Journal Page Range
- p. 937-943.
Conference
- Title
- 19. IEEE photovoltaic specialists conference.
- Dates
- 4-8 May 1987.
- Place
- New Orleans, LA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19049579
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALGORITHMS; EFFICIENCY; ELECTRONS; EPITAXY; INDIUM PHOSPHIDES; MATERIALS TESTING; MATHEMATICAL MODELS; OPTIMIZATION; PHYSICAL RADIATION EFFECTS; SOLAR CELLS; SPECIFICATIONS; VARIATIONS
- Descriptors DEC
- DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; EQUIPMENT; FERMIONS; INDIUM COMPOUNDS; LEPTONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; RADIATION EFFECTS; TESTING