Published 1987 | Version v1
Book

Modelling and design of high efficiency radiation tolerant indium phosphide space solar cells

  • 1. E.E. Dept., Cleveland State Univ., Cleveland, OH 44115

Description

Using a fairly comprehensive model, the authors did a parametric variation study of the InP shallow homojunction solar cell with a view to determining the maximum realistically achievable efficiency and an optimum design that would yield this efficiency. Their calculations show that with good quality epitaxial material, a BOL efficiency of about 20.3% at 1AMO, 250C may be possible. The design parameters of the near-optimum cell are given. Also presented are the expected radiation damage of the performance parameters by 1MeV electrons and a possible explanation of the high radiation tolerance of InP solar cells

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
Nineteenth IEEE photovoltaic specialists conference, 1987. (Conference Record)
Journal Page Range
p. 937-943.

Conference

Title
19. IEEE photovoltaic specialists conference.
Dates
4-8 May 1987.
Place
New Orleans, LA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
19049579
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALGORITHMS; EFFICIENCY; ELECTRONS; EPITAXY; INDIUM PHOSPHIDES; MATERIALS TESTING; MATHEMATICAL MODELS; OPTIMIZATION; PHYSICAL RADIATION EFFECTS; SOLAR CELLS; SPECIFICATIONS; VARIATIONS
Descriptors DEC
DIRECT ENERGY CONVERTERS; ELECTRONIC EQUIPMENT; ELEMENTARY PARTICLES; EQUIPMENT; FERMIONS; INDIUM COMPOUNDS; LEPTONS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; RADIATION EFFECTS; TESTING