Study on the negative bias temperature instability effect under dynamic stress
Creators
- 1. School of Technical Physics, Xidian University, Xi'an 710071 (China)
- 2. School of Electronical and Machanical Engineering, Xidian University, Xi'an 710071 (China)
- 3. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071 (China)
Description
This paper studies negative bias temperature instability (NBTI) under alternant and alternating current (AC) stress. Under alternant stress, the degradation smaller than that of single negative stress is obtained. The smaller degradation is resulted from the recovery of positive stress. There are two reasons for the recovery. One is the passivation of H dangling bonds, and another is the detrapping of charges trapped in the oxide. Under different frequencies of AC stress, the parameters all show regular degradation, and also smaller than that of the direct current stress. The higher the frequency is, the smaller the degradation becomes. As the negative stress time is too small under higher frequency, the deeper defects are hard to be filled in. Therefore, the detrapping of oxide charges is easy to occur under positive bias and the degradation is smaller with higher frequency
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/19/11/117308Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 19
- Journal Issue
- 11
- Journal Page Range
- [4 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45007006
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALTERNATING CURRENT; CRYSTAL DEFECTS; DEFECTS; DIRECT CURRENT; FREQUENCY DEPENDENCE; INSTABILITY; OXIDES; PASSIVATION; STRESSES; TRAPPING
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CURRENTS; OXYGEN COMPOUNDS