Published November 2010 | Version v1
Journal article

Study on the negative bias temperature instability effect under dynamic stress

  • 1. School of Technical Physics, Xidian University, Xi'an 710071 (China)
  • 2. School of Electronical and Machanical Engineering, Xidian University, Xi'an 710071 (China)
  • 3. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071 (China)

Description

This paper studies negative bias temperature instability (NBTI) under alternant and alternating current (AC) stress. Under alternant stress, the degradation smaller than that of single negative stress is obtained. The smaller degradation is resulted from the recovery of positive stress. There are two reasons for the recovery. One is the passivation of H dangling bonds, and another is the detrapping of charges trapped in the oxide. Under different frequencies of AC stress, the parameters all show regular degradation, and also smaller than that of the direct current stress. The higher the frequency is, the smaller the degradation becomes. As the negative stress time is too small under higher frequency, the deeper defects are hard to be filled in. Therefore, the detrapping of oxide charges is easy to occur under positive bias and the degradation is smaller with higher frequency

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/19/11/117308

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
19
Journal Issue
11
Journal Page Range
[4 p.]
ISSN
1674-1056

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45007006
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALTERNATING CURRENT; CRYSTAL DEFECTS; DEFECTS; DIRECT CURRENT; FREQUENCY DEPENDENCE; INSTABILITY; OXIDES; PASSIVATION; STRESSES; TRAPPING
Descriptors DEC
CHALCOGENIDES; CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CURRENTS; OXYGEN COMPOUNDS