The Effect of Ring Expansion in Thienobenzo[b]indacenodithiophene Polymers for Organic Field-Effect Transistors
Creators
- 1. King Abdullah University of Science and Technology (KAUST), Thuwal (Saudi Arabia)
- 2. Imperial College London (United Kingdom)
Description
A fused donor, thienobenzo[b]indacenodithiophene (TBIDT), was designed and synthesized using a novel acid-promoted cascade ring closure strategy, and then copolymerized with a benzothiadiazole (BT) monomer. The backbone of TBIDT is an expansion of the well-known indacenodithiophene (IDT) unit and was expected to enhance the charge carrier mobility by improving backbone planarity and facilitating short contacts between polymer chains. However, the optimized field-effect transistors demonstrated an average saturation hole mobility of 0.9 cm2 V-1 s-1, lower than the performance of IDT-BT (~1.5 cm2 V-1 s-1). Mobilities extracted from time-resolved microwave conductivity measurements were consistent with the trend in hole mobilities in organic field-effect transistor devices. Scanning tunneling microscopy measurements and computational modeling illustrated that TBIDT-BT exhibits a less ordered microstructure in comparison to IDT-BT. This reveals that a regular side-chain packing density, independent of conformational isomers, is critical to avoid local free volume due to irregular packing, which can host trapping impurities. DFT calculations indicated that TBIDT-BT, despite containing a larger, planar unit, showed less stabilization of planar backbone geometries in comparison to IDT-BT. This is due to the reduced electrostatic stabilizing interactions between the peripheral thiophene of the fused core and the BT unit, resulting in a reduction of the barrier to rotation around the single bond. These insights provide a greater understanding of the general structure-property relationships required for semiconducting polymer repeat units to ensure optimal backbone planarization, as illustrated with IDT-type units, guiding the design of novel semiconducting polymers with extended fused backbones for high-performance field-effect transistors.
Availability note (English)
Available from https://www.osti.gov/servlets/purl/1579641; https://www.osti.gov/biblio/1579641; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo periodAdditional details
Identifiers
Publishing Information
- Journal Title
- Journal of the American Chemical Society
- Journal Volume
- 141
- Journal Issue
- 47
- Journal Page Range
- p. 18806-18813
- ISSN
- 0002-7863
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 55005933
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- AZOLES; CARRIER MOBILITY; CHARGE CARRIERS; EXPANSION; FIELD EFFECT TRANSISTORS; HOLE MOBILITY; MICROWAVE RADIATION; POLYCYCLIC SULFUR HETEROCYCLES; POLYMERS; SCANNING TUNNELING MICROSCOPY; TIME RESOLUTION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; HETEROCYCLIC COMPOUNDS; MICROSCOPY; MOBILITY; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; ORGANIC SULFUR COMPOUNDS; RADIATIONS; RESOLUTION; SEMICONDUCTOR DEVICES; TIMING PROPERTIES; TRANSISTORS
Optional Information
- Contract/Grant/Project number
- Contract AC36-08GO28308; AC02-76SF00515; EP/G037515/1; EP/M005143/1; EP/M005141/1; 643791; 610115; 1808401
- Funding organization
- USDOE Office of Science - SC, Basic Energy Sciences (BES) (SC-22), Solar Photochemistry Program (United States); National Science Foundation (NSF) (United States); USDOE Office of Science - SC, Basic Energy Sciences (BES) (United States)
- Secondary number(s)
- OSTIID--1579641