Published September 1984 | Version v1
Journal article Metadata-only

A 256K-bit dynamic RAM - with high alpha immunity

Creators

  • 1. Hitachi Ltd. (Japan). Musashi Works
  • 2. Hitachi Ltd. (Japan). Device Development Center

Description

Two types of 256K-bit DRAMs are described. One has the conventional page mode for high speed operation. The other has a new function, the nibble mode. The nibble mode makes possible very fast 4-bit serial read/write operation. High alpha immunity is obtained by utilizing high memory cell capacitance, a metal folded-bit-line structure, and a fully Vsub(CC) storage circuit. Redundancy technology is employed to enhance yield. (author)

Additional details

Publishing Information

Journal Title
Microelectron. J.
Journal Volume
15
Journal Issue
5
Series
Microelectron. J.
Journal Page Range
5-15
ISSN
0026-2692

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
16027684
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ALPHA PARTICLES; ALUMINIUM; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRONIC CIRCUITS; FABRICATION; IMPURITIES; PERMITTIVITY; PLANNING; POLYMERS; RADIATION EFFECTS; SELF-IRRADIATION; SEMICONDUCTOR STORAGE DEVICES; SILICON; SILICON OXIDES; SPECIFICATIONS
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELEMENTS; HELIUM IONS; IONS; IRRADIATION; MATERIALS; MEMORY DEVICES; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS

Optional Information

Notes
Reprinted from Hitachi Review, v. 33(2) 1984.