Published January 2004
| Version v1
Journal article
ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics
- 1. School of Engineering, Information and Communications University (ICU), 58-4, Hwaam-dong, Yusong-gu, Taejon 305-732 (Korea, Republic of)
Description
The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications
Additional details
Identifiers
- DOI
- 10.1116/1.1627769;
Publishing Information
- Journal Title
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Journal Volume
- 22
- Journal Issue
- 1
- Journal Page Range
- p. 129-134
- ISSN
- 0734-2101
- CODEN
- JVTAD6
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36028146
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- DEPOSITION; GRAIN GROWTH; GRAIN ORIENTATION; MAGNETRONS; RADIOWAVE RADIATION; RESONATORS; SOUND WAVES; SPUTTERING; THIN FILMS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MICROSTRUCTURE; MICROWAVE EQUIPMENT; MICROWAVE TUBES; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2004 American Vacuum Society.