Published March 1973
| Version v1
Journal article
Application of a stopping power formula to channeled ions
Description
Abstract A formula based on a modification and extension of the Firsov theory for the electronic stopping cross section has been fit to experimental data for helium ions incident on silicon. This formula was previously found to give a good fit to all available data for gaseous targets. We demonstrate here that it also applies for ions in solids for both random and channeled incidence. The parameters of the formula are given for helium incident along random directions and along ⟨111⟩, ⟨110⟩, and {111}. The results suggest that proper channeled particles contribute significantly to the ⟨110⟩ energy loss spectra at energies below 400 keV
Additional details
Identifiers
Publishing Information
- Journal Title
- Radiation Effects
- Journal Volume
- 18
- Journal Issue
- 1-2
- Series
- Radiat. Eff.
- Journal Page Range
- 13-16
- ISSN
- 0033-7579
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 4090099
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; CRYSTAL LATTICES; ENERGY LOSSES; ENERGY SPECTRA; HELIUM IONS; ION BEAMS; ION CHANNELING; MATHEMATICAL MODELS; SILICON; STOPPING POWER
- Descriptors DEC
- BEAMS; CHANNELING; CRYSTAL STRUCTURE; DISTRIBUTION; ELEMENTS; SEMIMETALS; SPECTRA
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent