Ab initio study of the stability of intrinsic and extrinsic Ag point defects in 3CSiC
Creators
- 1. Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI, 48109 (United States)
- 2. Fuel Design and Development Department, Idaho National Laboratory, Idaho Falls, ID, 83415-6188 (United States)
- 3. Reactor Physics Design and Analysis Department, Idaho National Laboratory, Idaho Falls, ID, 83415-6188 (United States)
Description
We have systematically investigated the energetics and stability of Ag atom in 3CSiC with various charge states using first-principles calculations within large supercells. Up to 18 Ag-defect configurations have been examined, including substitutionals, interstitials, and vacancy-based complexes. A general trend is that the formation energy of Ag-defect complexes is generally lower than interstitial typed defects. With the lowest formation energy, the configuration with AgTSi-VC3+ turns out to be the most stable one. It has also been found a neutral Ag is more likely to substitute a silicon lattice site with a nearest carbon vacancy, thus forming an AgSi-VC pair. All these data are important inputs in the next coarser-level modeling to understand the Ag migration in and release from 3CSiC under both thermal and radiation conditions.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jnucmat.2018.08.053Additional details
Identifiers
- DOI
- 10.1016/j.jnucmat.2018.08.053;
- PII
- S0022311518307669;
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 510
- Journal Page Range
- p. 596-602
- ISSN
- 0022-3115
- CODEN
- JNUMAM
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49103323
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE STATES; DENSITY FUNCTIONAL METHOD; FISSION PRODUCTS; FORMATION HEAT; INTERSTITIALS; SILICON CARBIDES; SILVER
- Descriptors DEC
- CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENTHALPY; ISOTOPES; MATERIALS; METALS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIOACTIVE MATERIALS; REACTION HEAT; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENTS; VARIATIONAL METHODS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.