Published 1990
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Mechanisms of defect formation in zinc selenide during impulsed irradiation by powerful subthreshold electron beams
Description
Processes of subthreshold defect formation on irradiation of ZnSe by electron pulsed beams having 90ns durtion and 0.2-1.3 J/cm2 energy density in a pulse are studied. Irradiated layers are tested by electron microscopy and photoluminescence methods. 10 refs.; 2 figs
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22057274.pdf
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Additional details
Additional titles
- Original title (Russian)
- Механизмы дефектообразования в селениде цинка при импульсном облучении мощными электронными пучками подпороговых энергий
Publishing Information
- Imprint Title
- Experimental and theoretical physics
- Imprint Pagination
- 45 p.
- Journal Issue
- no.6
- Series
- Kratkie soobshcheniya po fizike.
- Journal Page Range
- p. 24-26.
- Report number
- INIS-SU--258
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 22057274
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRON BEAMS; FRENKEL DEFECTS; KEV RANGE 10-100; MONOCRYSTALS; P-TYPE CONDUCTORS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; PULSED IRRADIATION; TEMPERATURE DEPENDENCE; ZINC SELENIDES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; EMISSION; ENERGY RANGE; IRRADIATION; KEV RANGE; LEPTON BEAMS; LUMINESCENCE; MATERIALS; PARTICLE BEAMS; PHOTON EMISSION; POINT DEFECTS; RADIATION EFFECTS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; VACANCIES; ZINC COMPOUNDS
Optional Information
- Notes
- Imprint:Ehksperimental'naya i teoreticheskaya fizika.;Sbornik.