Prediction method by black box modelling

Black box representations for several junction-isolated integrated circuit types were developed which are capable of predicting the transient ionizing radiation performance. This is a significant change from previous methods in which the model reproduces measurement data. The basis for the development was to identify, from detailed circuit modelling, the malfunction mechanisms which cause upset of operation. The mechanisms are characterized in terms of circuit operating conditions and fabrication process-related parameters. The malfunction relationships are incorporated into black box representations to give simplified models capable of predicting the radiation performance from user-specified environments. Good correlation was achieved between predicted and observed performances for digital circuits made by gold-doped and other technologies and for a linear application