Published March 25, 2011 | Version v1
Journal article

Light absorption mechanism in single c-Si (core)/a-Si (shell) coaxial nanowires

  • 1. Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, and Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, and Institute of Solar Energy, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200240 (China)

Description

We have carried out detailed investigations on the light absorption mechanism in single crystalline silicon (c-Si) (core)/amorphous Si (a-Si) (shell) coaxial nanowires (NWs). Based on the Lorenz-Mie light scattering theory, we have found that the light absorption in the coaxial NWs relies on the leaky mode resonances and that the light absorption can be optimized towards photovoltaic applications when the a-Si shell thickness is about twice the c-Si core radius. The photocurrent has been found to be enhanced up to ∼ 560% compared to c-Si NWs, and to be further enhanced up to ∼ 60% by coating the nonabsorbing dielectric shells.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/22/12/125705

Additional details

Identifiers

DOI
10.1088/0957-4484/22/12/125705;
PII
S0957-4484(11)77677-2;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
22
Journal Issue
12
Journal Page Range
[4 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43025330
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ABSORPTION; LIGHT SCATTERING; MONOCRYSTALS; PHOTOVOLTAIC EFFECT; QUANTUM WIRES; RESONANCE; SILICON; THICKNESS
Descriptors DEC
CRYSTALS; DIMENSIONS; ELEMENTS; NANOSTRUCTURES; PHOTOELECTRIC EFFECT; SCATTERING; SEMIMETALS; SORPTION