Published 1992 | Version v1
Book

Studies of crystallinity for sputtering deposited Bi-based oxide films

  • 1. Matsushita Electric Industrial Co. Ltd., Moriguchi, Osaka (Japan). Central Research Lab.

Description

This paper reports on crystalline quality of Bi-based oxide films evaluated by means of X-ray diffraction (XRD) and ion-channeling on the Rutherford backscattering (RBS). The films were sputter deposited 2201-phase Bi2Sr2CuP1O6-δ (BSCQ) and 2212-phase Bi2Sr2Ca1Cu2O8-δ (BSCCO). They were prepared on MgO (100) and SrTiO3 (100) substrates at the low temperature of 650 degrees C during the deposition. The best quality, however thin films had poor crystallinity compared to single crystals, was obtained with the 2201-phase BSCO film that was deposited on a SrTiO3 (100) substrate. The full width at half maximum (FWHM) value of the rocking curve on XRD for the film was estimated as 1560 (arc sec)

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-170-0
Imprint Title
Proceedings of layered superconductors
Imprint Pagination
929 p.
Journal Page Range
p. 901-906.

Conference

Title
1992 Material Research Society (MRS) spring meeting.
Dates
27 Apr - 2 May 1992.
Place
San Francisco, CA (United States).

Optional Information

Secondary number(s)
CONF-920402--.