Published August 2019 | Version v1
Journal article Metadata-only

The Influence of EL2 Centers on the Photoelectric Response of an Array of Radial GaAs/AlGaAs Nanowires

Creators

  • 1. St. Petersburg State University (Russian Federation)
  • 2. Institute for Analytical Instrumentation, Russian Academy of Sciences (Russian Federation)
  • 3. St. Petersburg University of Information Technologies, Mechanics, and Optics (ITMO University) (Russian Federation)
  • 4. St. Petersburg Academic University, Russian Academy of Sciences (Russian Federation)

Description

We have studied the role of EL2 centers in formation of the photoelectric response of an array of radial n-type GaAs/AlxGa1 –xAs (x = 0.3) nanowires (NWs) grown by molecular beam epitaxy on a p-type silicon substrate. Results revealed a significant decrease in the time of NW photoresponse recovery as compared to that in a bulk crystal upon the transition of EL2 centers from a metastable nonactive state to the normal ground state.

Additional details

Identifiers

DOI
10.1134/S1063785019080212;

Publishing Information

Journal Title
Technical Physics Letters
Journal Volume
45
Journal Issue
8
Journal Page Range
p. 835-838
ISSN
1063-7850

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
51093164
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ALUMINIUM ARSENIDES; CRYSTALS; GALLIUM ARSENIDES; GROUND STATES; MOLECULAR BEAM EPITAXY; NANOWIRES; PHOTOELECTRIC EFFECT; P-TYPE CONDUCTORS; SILICON; SUBSTRATES
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELEMENTS; ENERGY LEVELS; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PNICTIDES; SEMICONDUCTOR MATERIALS; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2019 Pleiades Publishing, Ltd.