Published August 1982
| Version v1
Journal article
Electrical and back-scattering studies of thermally annealed gallium implanted silicon
- 1. Tata Inst. of Fundamental Research, Bombay (India)
Description
In this paper we report results of (a) the α-particle back-scattering and channelling, and (b) sheet resistivity and Hall mobility measurements on Ga-implanted Si samples at three different doses in the range 3 x 1014/cm2 to 6 x 1015/cm2, followed by various thermal annealing treatments. The results are discussed. (author)
Additional details
Publishing Information
- Journal Title
- Radiat. Eff.
- Journal Volume
- 63
- Journal Issue
- 1-4
- Series
- Radiat. Eff.
- Journal Page Range
- 47-54
- ISSN
- 0033-7579
Conference
- Title
- International workshop on ion implantation, laser treatment and ion beam analysis of materials.
- Dates
- 9 - 13 Feb 1981.
- Place
- Bombay (India).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 14725940
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALPHA PARTICLES; ANNEALING; BACKSCATTERING; CARRIER MOBILITY; DEPTH; ELECTRIC CONDUCTIVITY; GALLIUM IONS; HALL EFFECT; ION CHANNELING; ION IMPLANTATION; RADIATION DOSES; SILICON; SPATIAL DISTRIBUTION; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ATOMIC IONS; CHANNELING; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELECTRICAL PROPERTIES; ELEMENTS; HEAT TREATMENTS; HELIUM IONS; IONS; MOBILITY; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS