The effect of implantation temperature on the mechanism of misfit dislocation formation

Defects in Si appearing after P+ implantation at room and elevated temperatures (200, 400 0C) and followed by high-temperature (above 1000 0C) annealing are studied by electron microscopy. The formation stages of misfit dislocation networks (MDN) as well as their behaviour during annealing are considered. It is shown that after room-temperature irradiation in specimen during further annealing one-layer MDN is formed which consists of edge dislocations with Burgers vectors parallel to the specimen surface. The elevated-temperature irradiation results in a multi-layer MDN having dislocations with Burgers vectors both, parallel to the specimen surface and inclined to it. These differences are attributed to the structure of defect complexes appearing in irradiated Si. Based on these complex properties the ways of forming various networks by changing annealing regimes are found. (author)