Light-emitting materials fabricated by dual implantation of Si and N into SiO2 films

A new method to fabricate Si-based, light-emitting materials by dual ion implantation of Si and N into SiO2 films is reported. The Si and N ions were respectively used with three different energies at corresponding doses. As revealed by secondary ion mass spectroscopy (SIMS) depth profile, the implanted N ions have a uniform distribution in a wide region under the surface. Infrared reflection spectra indicate that the microstructures of the films are stable even after annealed at 600C. Intense UV-visible photoluminescence (PL) peaking at ∼330, ∼430, and ∼660 nm, respectively, was observed at room temperature from the as-implanted samples with or without annealing. The PL peak intensities vary with the annealing temperature, and have a maximum at about 600C. The electron spin resonance (ESR) signals decrease monotonically with the increment of the annealing temperature and disappear when the annealing temperature is higher than 600C. The PL is attributed to some defects or N-bonded Si-O species. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)