X-ray diffractometric determination of the degree of long-range order in epitaxial InxGa1-xP layers
Creators
- 1. Physicotechnical Research Institute at Nizhnii Novgorod State University, Nizhnii Novgorod (Russian Federation)
Description
An x-ray diffractometric study of the degree of the long-range order in epitaxial InxGa1-xP (x=0.44-0.54) solid solutions has been performed. The epitaxial solid solutions were obtained by MOS-hydride epitaxy on the (001)GaAs substrates with a 3 deg. deviation from the (001) plane with respect to the (1-bar10) plane under atmospheric pressure and T=650 deg. C. The intensities of the strongest superstructural 1-bar/2 1/2 1/2 and structural 3-bar33 reflections from the epitaxial layers were measured. The degree of the long-range order was determined from the intensity ratio of these reflections. The maximum degree of the long-range order η=0.41 was observed in the layers of the composition close to x=0.5. At the ends of this composition range the degree of the long-range order reduced to η=0.13
Additional details
Identifiers
Publishing Information
- Journal Title
- Crystallography Reports
- Journal Volume
- 41
- Journal Issue
- 2
- Journal Page Range
- p. 316-319
- ISSN
- 1063-7745
- CODEN
- CYSTE3
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35073660
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- ATMOSPHERIC PRESSURE; EPITAXY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; LAYERS; REFLECTION; SOLID SOLUTIONS; TEMPERATURE RANGE 0400-1000 K; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; DISPERSIONS; GALLIUM COMPOUNDS; HOMOGENEOUS MIXTURES; INDIUM COMPOUNDS; MIXTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SCATTERING; SOLUTIONS; TEMPERATURE RANGE
Optional Information
- Notes
- Translated from Kristallografiya, ISSN 0023-4761, 41, 335-338 (March-April 1996); (c) 1996 MAIK/Interperiodika