Published July 1980
| Version v1
Journal article
Study of defects in silicon monocrystals by the pseudo Kossel method
Creators
- 1. Escola Federal de Engenharia de Itajuba, Minas Gerais (Brazil)
- 2. Sao Paulo Univ. (Brazil). Inst. de Fisica
Description
no abstract available
Additional details
Additional titles
- Original title (Portuguese)
- Estudo de defeitos em monocristais de silicio pelo metodo pseudo Kossel
Publishing Information
- Journal Title
- Cienc. Cult. (Sao Paulo)
- Journal Volume
- 32
- Journal Issue
- 7
- Series
- Cienc. Cult. (Sao Paulo).;Supl.
- Journal Page Range
- 268
- ISSN
- 0009-6725
Conference
- Title
- 32. Annual Meeting of the Brazilian Society for the Advancement of Science.
- Dates
- 6 - 12 Jul 1980.
- Place
- Rio de Janeiro, Brazil.
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 12625720
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- CRYSTAL DEFECTS; CRYSTAL GROWTH; KOSSEL METHOD; MONOCRYSTALS; SILICON
- Descriptors DEC
- CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; SEMIMETALS
Optional Information
- Notes
- Published in summary form only.