Published April 1, 2006
| Version v1
Journal article
Defect engineering for 650 nm high-power AlGaInP laser diodes
Creators
- 1. Department of Electronics Engineering, Korea University, 1-5 ka, Anam-dong, Sungbuk-gu, Seoul 136-701 (Korea, Republic of)
- 2. Discrete Semiconductor Device Division, Samsung Electro-Mechanic R and D Center, Suwon 443-803 (Korea, Republic of)
- 3. Photonics Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600 (Korea, Republic of)
Description
To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 deg. C. The characteristic temperatures (T ) were 212 K for 25-60 deg. C and 106 K over 60 deg. C
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2005.12.154;
- PII
- S0921-4526(05)01542-5;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 376-377
- Journal Page Range
- p. 610-613
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 23. international conference on defects in semiconductors
- Dates
- 24-29 Jul 2005
- Place
- Awaji Island (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37073202
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM PHOSPHIDES; ANNEALING; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; DENSITY; DISTRIBUTION; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; LASERS; LAYERS; OPTIMIZATION; POINT DEFECTS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SPECTROSCOPY
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.