Published September 29, 2005 | Version v1
Journal article

X-ray photoelectron spectroscopy study of MBE-grown Gd/EuTe multilayers

  • 1. Semiconductor Physics Institute, A. Gostauto Street 11, 01108 Vilnius (Lithuania)
  • 2. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)
  • 3. Institute of Physical Electronics of Kaunas University of Technology, Savanoriu 271, LT-3031Kaunas (Lithuania)

Description

Photoelectron spectroscopy has been used to study the Gd/EuTe multilayers structure covered with a thin (100 A) Al film. The study of the main core level and valence band photoemission spectra has shown no interaction between Gd and EuTe layers. Gadolinium was in pure metallic state and the ions of Eu were found divalent in the Gd/EuTe multilayers structure. The europium ions spectra analysis indicates that Ar+ ion sputtering of the sample surface leads to a deviation from stoichiometry in the near surface region of the EuTe layers and to the appearance of Eu3+ species in uppermost layers of the Gd/EuTe multilayers structure. The long-time exposure to the XPS ambient gases has been characterized from the analysis of europium 3d core level spectra

Additional details

Identifiers

DOI
10.1016/j.jallcom.2005.03.083;
PII
S0925-8388(05)00378-6;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
401
Journal Issue
1-2
Journal Page Range
p. 150-154
ISSN
0925-8388
CODEN
JALCEU

Conference

Title
International conference on experimental and computing methods in high resolution diffraction applied for structure characterization of modern materials
Acronym
7. international school and symposium on synchrotron radiation in natural science; HREDAMM 2004
Dates
13-17 Jun 2004
Place
Zakopane (Poland)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.