Published March 15, 2011
| Version v1
Journal article
Nonlinear thermal characteristics of silicon carbide devices
Creators
- 1. Department of Electronics and Computer Science, Technical University of Koszalin, J.J. Sniadeckich 2, Koszalin, 75-453 Koszalin (Poland)
Description
In the paper, the dynamic nonlinear model of SiC devices is proposed, where the dependencies of the thermal parameters on the temperature are included. The proposed model is applicable and useful in the simulations of electro-thermal transients in the devices working with high power density and in the wide range of temperature.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2010.06.021Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2010.06.021;
- PII
- S0921-5107(10)00450-2;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 176
- Journal Issue
- 4
- Journal Page Range
- p. 289-292
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43030571
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- EQUIPMENT; POWER DENSITY; SCHOTTKY BARRIER DIODES; SILICON CARBIDES; SIMULATION; TRANSIENTS
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.