A novel compensation method for polygonized mesa structures on (100) silicon substrate

A theoretical compensation method for polygonized mesa structures on (100) silicon substrate during the anisotropic etching process has been developed, which contains four stages as follows: prepare the information of the etching condition; predict the structure's undercutting profile; construct the topological structure of compensation patterns; and generate practical compensation patterns from the topological structure. The reasoning process is clearly stated, and detailed steps for the undercutting prediction and topological structure construction are summarized. Conclusions are also drawn about the rules which must be obeyed during the pattern generation process. The simulation and experimental results of some polygon structures are finally given to prove this method's validity and reliability. (semiconductor materials)