Published September 1998 | Version v1
Journal article

Layered Ruthenium Oxides: From Band Metal to Mott Insulator

  • 1. Department of Applied Physics, Stanford University, Stanford, California 94305-4045 (United States)
  • 2. Department of Physics, University of California at San Diego, La Jolla, California 92093-0319 (United States)
  • 3. Department of Physics and Astronomy, McMaster University, Hamilton, Ontario, L8S4M1 (CANADA)
  • 4. National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310 (United States)

Description

We present results of the first optical and angle-resolved photoemission study on a layered ruthenium oxide system with various Ca/Sr substitution levels. Using two-plane (Sr1-x Cax )3Ru2O7 and one-plane Ca2RuO 4 crystals we were able to study evolution of the electronic properties in a range from a band metal (Sr3 Ru2O 7) to a 'bad' metal (Ca3 Ru2O 7) to a Mott-Hubbard insulator (Ca2 RuO4) . Apart from a Mott-Hubbard metal-insulator transition (MIT), we have uncovered a qualitative change of the electronic properties at a critical x=0.33 . We suggest that the latter is a result of a quantum phase transition into an antiferromagnetic phase that precedes the real Mott-Hubbard MIT. copyright 1998 The American Physical Society

Additional details

Publishing Information

Journal Title
Physical Review Letters
Journal Volume
81
Journal Issue
13
Journal Page Range
p. 2747-2750
ISSN
0031-9007
CODEN
PRLTAO