Published May 16, 2011 | Version v1
Journal article

Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

  • 1. Instituut voor Kern-en Stralingsfysica and INPAC, K.U.Leuven, 3001 Leuven (Belgium)
  • 2. Instituto Tecnologico e Nuclear, UFA, 2686-953 Sacavem (Portugal)
  • 3. Department of Physics and Astronomy, IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Faculdade de Ciencias da Universidade do Porto, 4169-007 Porto (Portugal)
  • 4. Centro de Fisica Nuclear da Universidade de Lisboa, 1649-003 Lisboa (Portugal)

Description

We report on the lattice location of Mn in heavily p-type doped GaAs by means of β- emission channeling from the decay of 56Mn. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400 deg. C, with an activation energy for diffusion of 1.7-2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga1-xMnxAs.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
98
Journal Issue
20
Journal Page Range
p. 201905-201905.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2011 American Institute of Physics