Published October 10, 2007
| Version v1
Journal article
Mechanism of isolated pore formation in anodic alumina
Creators
- 1. School of Microelectronics, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai 200240 (China)
- 2. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904 (United States)
Description
Local anodization of aluminum was studied by patterning SiO2 masks on aluminum thin films by nanoimprint lithography and subsequent electrochemical anodization. We observed the formation of isolated pores when the mask openings are of the order of the steady-state unpatterned pore spacing, which is related to the breakdown strength of the alumina and the anodization potential. Based on our observations, we have developed an empirical model describing the formation mechanism of porous aluminum oxide. The model described successfully explains the formation and shapes of pores as a function of mask aperture size
Additional details
Identifiers
- DOI
- 10.1088/0957-4484/18/40/405302;
- PII
- S0957-4484(07)53854-7;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 18
- Journal Issue
- 40
- Journal Page Range
- p. 405302
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39040562
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; ALUMINIUM OXIDES; ANODIZATION; APERTURES; BREAKDOWN; ELECTROCHEMISTRY; POROUS MATERIALS; SILICON OXIDES; STEADY-STATE CONDITIONS; THIN FILMS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; CHEMISTRY; CORROSION PROTECTION; DEPOSITION; ELECTROCHEMICAL COATING; ELECTROLYSIS; ELEMENTS; FILMS; LYSIS; MATERIALS; METALS; OPENINGS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SURFACE COATING