Published December 2010
| Version v1
Journal article
Effects of the reciprocating parameters of the carrier on material removal rate and non-uniformity in CMP
Creators
- 1. Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024 (China)
Description
Based on the Preston equation, the mathematical model of the material removal rate (MRR), aiming at a line-orbit chemical mechanical polisher, is established. The MRR and the material removal non-uniformity (MRNU) are numerically calculated by MATLAB, and the effects of the reciprocating parameters on the MRR and the MRNU are discussed. It is shown that the smaller the inclination angle and the larger the amplitude, the higher the MRR and the lower the MRNU. The reciprocating speed of the carrier plays a minor role to improve the MRR and decrease the MRNU. The results provide a guide for the design of a polisher and the determination of a process in line-orbit chemical mechanical polishing. (semiconductor technology)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/31/12/126001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 31
- Journal Issue
- 12
- Journal Page Range
- [4 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43013296
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMPLITUDES; CARRIERS; MATHEMATICAL MODELS; MECHANICAL POLISHING; REMOVAL; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- MATERIALS; POLISHING; SURFACE FINISHING