Published December 2010 | Version v1
Journal article

Effects of the reciprocating parameters of the carrier on material removal rate and non-uniformity in CMP

  • 1. Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024 (China)

Description

Based on the Preston equation, the mathematical model of the material removal rate (MRR), aiming at a line-orbit chemical mechanical polisher, is established. The MRR and the material removal non-uniformity (MRNU) are numerically calculated by MATLAB, and the effects of the reciprocating parameters on the MRR and the MRNU are discussed. It is shown that the smaller the inclination angle and the larger the amplitude, the higher the MRR and the lower the MRNU. The reciprocating speed of the carrier plays a minor role to improve the MRR and decrease the MRNU. The results provide a guide for the design of a polisher and the determination of a process in line-orbit chemical mechanical polishing. (semiconductor technology)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/31/12/126001

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
31
Journal Issue
12
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43013296
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AMPLITUDES; CARRIERS; MATHEMATICAL MODELS; MECHANICAL POLISHING; REMOVAL; SEMICONDUCTOR MATERIALS
Descriptors DEC
MATERIALS; POLISHING; SURFACE FINISHING