Synergistic microwave and structural studies of C-type Ho2Si2O7

Highlights: → The structural properties are finding by using XRD and SEM. → The DC electrical and microwave properties of C-type Ho2Si2O7 are reported. → These properties include the dc electrical resistivity as a function of temperature and permittivity at room temperature. → Both ε' and ε'' decrease slightly as the frequency increases up to 1.5 GHz, after that ε' increases while ε'' decreases as the frequency increases. → At around 2.45 GHz, a resonance is observed. - Abstract: Ho2Si2O7 material exists in four polymorphs, a triclinic low temperature phase (type-B), a monoclinic modification (type-C), high temperature monoclinic (type-D), and high temperature orthorhombic modification (type-E). The structural properties are measured by XRD and the morphology is noted through scanning electron microscopy (SEM). The dc electrical resistivity (ρ) as a function of temperature and dielectric properties of C-type Ho2Si2O7 in the microwave region is measured. The activation energy is calculated from ln ρ versus 1/kBT plot. The activation energy is 0.119 ± 0.001 eV. Both the real (ε') and imaginary parts of permittivity (ε'') decrease slightly as the frequency increases up to 1.5 GHz, after that ε' increases while ε'' decreases as the frequency increases. At around 2.45 GHz, resonance is observed.