Published November 1, 2013 | Version v1
Journal article

First-principles calculations of generalized stacking fault energy in Mg alloys with Sn, Pb and Sn+Pb dopings

Description

A first-principles method was performed to calculate generalized stacking fault (GSF) energies in Mg alloys with Sn, Pb and Sn+Pb dopings for acting as references of designing Mg–Sn–Pb alloys. We clarify the effect of Sn is dominated than Pb atom on reduced unstable stacking fault energy (γus), especially in basal {0001}〈112¯0〉 and pyramidal {112¯2}〈112¯3〉 slip systems. Such a reduction of non-basal slip GSF energy is in favor of improving the ductility of Mg matrix

Availability note (English)

Available from http://dx.doi.org/10.1016/j.msea.2013.07.008

Additional details

Identifiers

DOI
10.1016/j.msea.2013.07.008;
PII
S0921-5093(13)00764-8;

Publishing Information

Journal Title
Materials Science and Engineering. A, Structural Materials: Properties, Microstructure and Processing
Journal Volume
584
Journal Page Range
p. 82-87
ISSN
0921-5093
CODEN
MSAPE3

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45106352
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ATOMS; DOPED MATERIALS; DUCTILITY; LEAD; MAGNESIUM ALLOYS; MANGANESE; STACKING FAULTS; TIN
Descriptors DEC
ALLOYS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; MATERIALS; MECHANICAL PROPERTIES; METALS; TENSILE PROPERTIES; TRANSITION ELEMENTS

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.