Published January 1983 | Version v1
Journal article

Epitaxial crystallization in Te-HgTe-CdTe system

  • 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.

Description

A study was made on possibility of preparation of Cdsub(x)Hgsub(1-x)Te epitaxial layers of steady in thickness composition during crystallization from cadmium and mercury solutions in tellurium. In approximation of ideal solution theory isotherms of liquidus of Te-HgTe-CdTe system were calculated for 470, 500, 550 and 600 deg C. Calculation results were used for study of crystallization of Cdsub(x)Hgsub(1-x)Te layers. Epitaxial layers of Cdsub(x)Hgsub(1-x)Te solid solutions were prepared by the method of liquid-phase epitaxy. It was established that layers have the region of variable composition near to substrate of not more, than 10 mm thickness at temperatures of crystallization beginning, not exceeding 500 deg C. In the rest part of layer the composition is practically steady. The dependence of composition of Cdsub(x)Hgsub(1-x)Te solid solution (epitaxial layers grown at 500 deg C temperature of crystallization beginning) on composition of liquid phase was established. It was found that in the investigated region of liquid phase compositions the value of cadmium segregation factor equals approximately 8 and doesn't depend practically on solution composition

Additional details

Additional titles

Original title (Russian)
Эпитаксиальная кристаллизация в системе Те-HgTe-CdTe

Publishing Information

Journal Title
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Volume
19
Journal Issue
1
Series
Izv. Akad. Nauk SSSR, Neorg. Mater.
Journal Page Range
59-61
ISSN
0002-337X

Optional Information

Notes
For English translation see the journal Inorganic Materials (USA).