Published July 2008
| Version v1
Journal article
Study about of CdTe radiation detector using field emitter array
Creators
- 1. Shizuoka Univ., Research Institute of Electronics, Hamamatsu, Shizuoka (Japan)
- 2. National Inst. of Advanced Industrial Science and Technology, Tsukuba, Ibaraki (Japan)
Description
We have developed the CdTe X-ray imaging sensor using electron beam from field emitter arrays (FEA). In this paper, it was described that was fabricated the X-ray image sensor, which consisted of a Schottky CdTe diode and a 12x12 matrix FEA. (author)
Additional details
Publishing Information
- Journal Title
- Hoshasen
- Journal Volume
- 34
- Journal Issue
- 3
- Journal Page Range
- p. 212-217
- ISSN
- 0285-3604
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 41062838
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CDTE SEMICONDUCTOR DETECTORS; COPPER; ELECTRON BEAMS; FABRICATION; FIELD EMISSION; IMAGE PROCESSING; PLATES; SCHOTTKY BARRIER DIODES; SPATIAL RESOLUTION; THICKNESS; X-RAY DETECTION; X-RAY RADIOGRAPHY
- Descriptors DEC
- BEAMS; DETECTION; DIMENSIONS; ELEMENTS; EMISSION; INDUSTRIAL RADIOGRAPHY; LEPTON BEAMS; MATERIALS TESTING; MEASURING INSTRUMENTS; METALS; NONDESTRUCTIVE TESTING; PARTICLE BEAMS; PROCESSING; RADIATION DETECTION; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TESTING; TRANSITION ELEMENTS
Optional Information
- Notes
- 7 refs., 8 figs.