Published 2003
| Version v1
Miscellaneous
Two-dimensional numerical simulation of the effect of single event upset for SRAM
- 1. Northwest Inst. of Nuclear Technology, Xi'an (China)
Description
In the paper, SEU for SRAM is simulated using the software of MEDICI two-dimensional device simulator. From the theory, a reliable approach is set up for analyzing device's SEU. Collective charge depending on LET for specific device structure is calculated for different particles LET and critical charge is provided. The results of simulation are consistent with the model of charging funnel. It has been proven that the models presented in the paper are correct. There are some improvements to be discussed
Additional details
Publishing Information
- Imprint Title
- Proceedings of the 11th national conference on nuclear electronics and nuclear detection technology
- Imprint Pagination
- 598 p.
- Journal Page Range
- p. 421-425
Conference
- Title
- 11. national conference on nuclear electronics and nuclear detection technology
- Dates
- 1-6 Dec 2002
- Place
- Xiamen (China)
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 35048907
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- ELECTRIC CHARGES; LET; M CODES; MATHEMATICAL MODELS; MOSFET; RADIATION EFFECTS; SEMICONDUCTOR STORAGE DEVICES; SIMULATION; SPACE; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- COMPUTER CODES; ENERGY TRANSFER; FIELD EFFECT TRANSISTORS; MEMORY DEVICES; MOS TRANSISTORS; SEMICONDUCTOR DEVICES; TRANSISTORS