Published November 28, 2007 | Version v1
Journal article

Mapping potential landscapes of semiconducting carbon nanotubes with scanning gate microscopy

  • 1. Division of Energy Systems Research, Ajou University, Suwon 443-749 (Korea, Republic of)
  • 2. Department of Physics, Korea University, Seoul 136-713 (Korea, Republic of)

Description

Inhomogeneities in the energy bands of semiconducting carbon nanotubes (CNTs) are investigated with scanning gate microscopy (SGM). Non-uniform responses of a semiconducting CNT to a local electric field are found in SGM images which are obtained at the different depletion states of the CNT. The results indicate that local potential perturbations affect the transport characteristics of semiconducting CNTs significantly, especially near the off-state of the device

Additional details

Identifiers

DOI
10.1088/0957-4484/18/47/475712;
PII
S0957-4484(07)54373-4;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
18
Journal Issue
47
Journal Page Range
p. 475712
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39040350
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CARBON; ELECTRIC FIELDS; MAPPING; MICROSCOPY; NANOTUBES; PERTURBATION THEORY; POTENTIALS
Descriptors DEC
ELEMENTS; NANOSTRUCTURES; NONMETALS