Published September 30, 2008
| Version v1
Journal article
Stability of the tunneling current across Si nanochain network
Creators
- 1. Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan)
Description
The stability of the current across Si nanochain network is investigated using a micromanipulator in a scanning electron microscope system. We confirm that the current is dominated by the tunneling of electrons between Si nanoparticles. We observe large current fluctuations at a high bias voltage, while the current is stable at a relatively low bias voltage. The origin of the fluctuation is discussed in terms of percolation
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2008.01.065Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2008.01.065;
- PII
- S0169-4332(08)00097-4;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 254
- Journal Issue
- 23
- Journal Page Range
- p. 7573-7575
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 9. international conference on atomically controlled surfaces, interfaces and nanostructures
- Acronym
- ASCIN-9
- Dates
- 11-15 Nov 2007
- Place
- Tokyo (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40032163
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- FLUCTUATIONS; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SILICON; STABILITY; TUNNEL EFFECT
- Descriptors DEC
- ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; SEMIMETALS; VARIATIONS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.