Published September 30, 2008 | Version v1
Journal article

Stability of the tunneling current across Si nanochain network

  • 1. Department of Physics, Graduate School of Science, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan)

Description

The stability of the current across Si nanochain network is investigated using a micromanipulator in a scanning electron microscope system. We confirm that the current is dominated by the tunneling of electrons between Si nanoparticles. We observe large current fluctuations at a high bias voltage, while the current is stable at a relatively low bias voltage. The origin of the fluctuation is discussed in terms of percolation

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2008.01.065

Additional details

Identifiers

DOI
10.1016/j.apsusc.2008.01.065;
PII
S0169-4332(08)00097-4;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
254
Journal Issue
23
Journal Page Range
p. 7573-7575
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
9. international conference on atomically controlled surfaces, interfaces and nanostructures
Acronym
ASCIN-9
Dates
11-15 Nov 2007
Place
Tokyo (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40032163
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
FLUCTUATIONS; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SILICON; STABILITY; TUNNEL EFFECT
Descriptors DEC
ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; SEMIMETALS; VARIATIONS

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.