Published August 2010 | Version v1
Journal article

Global plasma simulation of charge state distribution inside a 2.45 GHz ECR plasma with experimental verification

  • 1. Space Research and Planetary Sciences, University of Bern, 3012 Bern (Switzerland)

Description

For the first time, the charge state distribution inside the MEsskammer fuer FlugzeitInStrumente und Time-Of-Flight (MEFISTO) electron cyclotron resonance (ECR) plasma and in the extracted ion beam was successfully simulated. A self-consistent ECR plasma ionization model (Hohl M 2002 MEFISTO II: Design, setup, characterization and operation of an improved calibration facility for solar plasma instrumentation PhD Thesis University of Bern) was further developed, recomputing the ion confinement time for every ion species and in every time step based on the actual plasma potential rather than using a prescribed constant ion confinement time. The simulation starts with a user defined set of initial conditions and develops the problem in time space by an adaptive step length fourth order Runge-Kutta (RK4) solver, considering particle densities based on ionization rates, recombination rates, ion confinement times and plasma potential. At the simulation end, a steady-state ion charge state distribution is reached, which is in excellent agreement with the measured ion beam charge state distribution of the MEFISTO ion source for Ar1+ to Ar5+ and in good agreement for Ar6+.

Availability note (English)

Available from http://dx.doi.org/10.1088/0963-0252/19/4/045024

Additional details

Identifiers

DOI
10.1088/0963-0252/19/4/045024;
PII
S0963-0252(10)37748-6;

Publishing Information

Journal Title
Plasma Sources Science and Technology
Journal Volume
19
Journal Issue
4
Journal Page Range
[6 p.]
ISSN
0963-0252

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42035845
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
CHARGE STATES; CONFINEMENT TIME; ECR HEATING; ION BEAMS; IONIZATION; PLASMA; PLASMA POTENTIAL; PLASMA SIMULATION; RECOMBINATION
Descriptors DEC
BEAMS; ELECTRIC POTENTIAL; HEATING; HIGH-FREQUENCY HEATING; PLASMA HEATING; SIMULATION