Published June 2012 | Version v1
Journal article

Optimized growth and dielectric properties of barium titanate thin films on polycrystalline Ni foils

  • 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)
  • 2. Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249 (United States)

Description

Barium titanate (BTO) thin films were deposited on polycrystalline Ni foils by using the polymer assisted deposition (PAD) technique. The growth conditions including ambient and annealing temperatures were carefully optimized based on thermal dynamic analysis to control the oxidation processing and interdiffusion. Crystal structures, surface morphologies, and dielectric performance were examined and compared for BTO thin films annealed under different temperatures. Correlations between the fabrication conditions, microstructures, and dielectric properties were discussed. BTO thin films fabricated under the optimized conditions show good crystalline structure and promising dielectric properties with inr ∼ 400 and tan δ < 0.025 at 100 kHz. The data demonstrate that BTO films grown on polycrystalline Ni substrates by PAD are promising in device applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/21/6/067701

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
21
Journal Issue
6
Journal Page Range
[6 p.]
ISSN
1674-1056