Published November 1995
| Version v1
Journal article
New perspectives in high-speed low-noise charge amplifiers with ultra-wide band heterojunction FETs
- 1. Politecnico di Milano (Italy). Dipartimento di Elettronica e Informazione
Description
The analysis of the noise properties of heterojunction field effect transistors opens the perspectives in designing charge preamplifiers operating at short shaping times with good noise performance. We present the characteristics of these devices, the expected performance and some experimental results on prototypes of HFET charge preamplifiers. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Physics. B, Proceedings Supplements
- Journal Volume
- 44
- Journal Page Range
- p. 591-598.
- ISSN
- 0920-5632
- CODEN
- NPBSE7
Conference
- Title
- 4. international conference on advanced technology and particle physics.
- Dates
- 3-7 Oct 1994.
- Place
- Como (Italy).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 27019933
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BACKGROUND NOISE; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; PREAMPLIFIERS; TIMING PROPERTIES
- Descriptors DEC
- AMPLIFIERS; ELECTRONIC EQUIPMENT; EQUIPMENT; NOISE; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; TRANSISTORS