Effect of sintering temperature on dielectric properties of SiO₂ doped BaTiO₃ ceramics

SiO₂-doped BaTiO₃ ceramics were prepared by solid state mixed oxide technique. The effect of small amounts (0.3 mol %) of SiO₂ additive on the microstructure, sintering behavior and dielectric properties of BaTiO₃-based ceramics have been investigated. SiO₂-doped BaTiO₃ ceramics sintered at 1175°C, 1200°C and 1225°C for 4h in air atmosphere have been found to exhibit high density and a uniform grain size. A scanning electron microscopy, X-ray diffraction analysis and LCR meters have been used to determine the microstructure, phase analysis and dielectric properties of the SiO₂ doped BaTiO₃ ceramics. The SiO₂ can form a liquid phase belonging to the ternary system BaO-TiO₂-SiO₂, leading to the formation of BaTiO₃ ceramics with high density at the lower sintering temperature, and improves the sintering and dielectric properties of BaTiO₃-based ceramics.