Published 1997
| Version v1
Miscellaneous
Surface aspects of strain relaxation during InAs/GaAs heteroepitaxy
Creators
Description
no abstract available
Availability note (English)
Available from British Library Document Supply Centre- DSC:DXN025206Additional details
Publishing Information
- Imprint Pagination
- [np]
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 30045810
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Thesis, Non-conventional Literature
- Descriptors DEI
- EPITAXY; GALLIUM ARSENIDES; INDIUM ARSENIDES; RELAXATION; STRAINS; SURFACE PROPERTIES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PNICTIDES