Published June 2010 | Version v1
Journal article

Synergistic effects of neutron and gamma ray irradiation of a commercial CHMOS microcontroller

  • 1. Department of Engineering Physics, Tsinghua University, Beijing 100084 (China)
  • 2. Northwest Institute of Nuclear Technology, Xi'an 710024 (China)

Description

This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20, which is a 16-bit high performance member of the MCS96 microcontroller family. The electrical and functional tests were made in three irradiation environments: neutron, gamma rays, combined irradiation of neutron and gamma rays. The experimental results show that the neutron irradiation can affect the total ionizing dose behaviour. Compared with the single radiation environment, the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation. This phenomenon may cause a significant hardness assurance problem. (condensed matter: structure, thermal and mechanical properties)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/19/6/066104

Additional details

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
19
Journal Issue
6
Journal Page Range
[8 p.]
ISSN
1674-1056