Published September 1987
| Version v1
Journal article
X-ray observation of dislocations in situ in gallium arsenide crystals near melting point by synchrotron radiation
Description
The behaviour of dislocations in gallium arsenide near the melting point is studied. It is detected that the melting starts simultaneously both in dislocation and non-dislocation regions. Dislocations are stabilized in the process of crystal melting
Additional details
Additional titles
- Original title (Russian)
- Рентгеновское наблюдение дислокаций ин ситу в кристаллах арсенида галлия около точки плавления при помощи синхротронного излучения
Publishing Information
- Journal Title
- Izv. Akad. Nauk SSSR, Ser. Fiz.
- Journal Volume
- 51
- Journal Issue
- 9
- Series
- Izv. Akad. Nauk SSSR, Ser. Fiz.
- Journal Page Range
- 1572-1575
- ISSN
- 0367-6765
- CODEN
- IANFA
Conference
- Title
- 5. International conference Properties and structure of dislocations in semiconductors.
- Dates
- 17-22 Mar 1986.
- Place
- Moscow (USSR).
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 19064626
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DISLOCATIONS; GALLIUM ARSENIDES; MELTING POINTS; MONOCRYSTALS; ORIENTATION; SYNCHROTRON RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BREMSSTRAHLUNG; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; LINE DEFECTS; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE