Published April 2008
| Version v1
Journal article
Neutron-transmutation doping for silicon semiconductor manufacturing
Creators
Description
One studies the situation and the future of the semiconducting silicon production on the basis of the neutron transmutation doping both in Japan and world-wide
Abstract (Russian)
Рассмотрены состояние и перспективы производства полупроводникового кремния методом нейтронного легирования в Японии и миреAdditional details
Additional titles
- Original title (Russian)
- Производство нейтронно-легированного полупроводникового кремния
Publishing Information
- Journal Title
- Atomnaya Tekhnika za Rubezhom
- Journal Issue
- no.4
- Journal Page Range
- p. 20-28
- ISSN
- 0320-9326
- CODEN
- ATRUA8
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 39097539
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- ALLOY SYSTEMS; IRRADIATION DEVICES; IRRADIATION REACTORS; JRR-3 REACTOR; JRR-4 REACTOR; NEUTRONS; RESEARCH REACTORS; SI SEMICONDUCTOR DETECTORS; SILICON; TRANSMUTATION
- Descriptors DEC
- BARYONS; ELEMENTARY PARTICLES; ELEMENTS; ENRICHED URANIUM REACTORS; FERMIONS; HADRONS; HEAVY WATER COOLED REACTORS; HEAVY WATER MODERATED REACTORS; IRRADIATION REACTORS; ISOTOPE PRODUCTION REACTORS; MATERIALS TESTING REACTORS; MEASURING INSTRUMENTS; NATURAL URANIUM REACTORS; NUCLEONS; POOL TYPE REACTORS; RADIATION DETECTORS; REACTORS; RESEARCH AND TEST REACTORS; RESEARCH REACTORS; SEMICONDUCTOR DETECTORS; SEMIMETALS; TANK TYPE REACTORS; WATER COOLED REACTORS; WATER MODERATED REACTORS
Optional Information
- Notes
- Translated from Japanese: IAEA Review, 2005-2006, p. 1-56, Part 1; 14 figs.