Published April 2008 | Version v1
Journal article

Neutron-transmutation doping for silicon semiconductor manufacturing

Creators

Description

One studies the situation and the future of the semiconducting silicon production on the basis of the neutron transmutation doping both in Japan and world-wide

Abstract (Russian)

Рассмотрены состояние и перспективы производства полупроводникового кремния методом нейтронного легирования в Японии и мире

Additional details

Additional titles

Original title (Russian)
Производство нейтронно-легированного полупроводникового кремния

Publishing Information

Journal Title
Atomnaya Tekhnika za Rubezhom
Journal Issue
no.4
Journal Page Range
p. 20-28
ISSN
0320-9326
CODEN
ATRUA8

Optional Information

Notes
Translated from Japanese: IAEA Review, 2005-2006, p. 1-56, Part 1; 14 figs.