Effect of the irradiation temperature on the charge state of close Frenkel pairs in n-Si-crystals

It is shown that primary radiation defects (RD) in n-type Si crystals in a metastable state, i.e. in the process of their formation, in the temperature range 80-200 degree C have opposite charges: vacancies are negative, and intestinal atoms are positive. In the area of self-conductance (Tir = 300 degree C), vacancies turn into the neutral state, which explains the absence of impact from external electric field ε, applied to the sample in the process of irradiation, on the efficiency of introduction of the secondary RD. We evaluated the life time of primary RD in the metastable state τ, distance between the components of Frenkel pairs l, and drift mobility μ of intestinal Si atoms at 220 degree C. These parameters occur to be as follows: τ approx 10-8s, l approx 5 centre dot 10-5 cm and μ approx 102 cm2/Vs