Effect of annealing under enhanced hydrostatic pressure on the microstructure of Cz-Si:H, He

The microstructure of Czochralski silicon (Cz-Si) co-implanted with H2+ at E = 135 keV and He+ at 75 keV to a total dose D H+He = 5 x 1016 cm-2 (Si:H, He) and of reference Si:H prepared by H2+ implantation to the same total dose (E = 135 keV, D H = 5 x 1016 cm-2), and annealed/treated at 723 and 923 K under hydrostatic argon pressure up to 1.1 GPa was investigated by X-ray high-resolution diffractometry and photoluminescence measurements. The treatment-induced effects depend both on the kind of implanted atoms (hydrogen + helium or hydrogen) and on the treatment parameters (temperature, pressure and treatment time). A qualitative explanation of the observed effects has been proposed