Published April 16, 1989
| Version v1
Journal article
An RBS study of ion induced mixing in the Sb-Si system
Creators
- 1. Uniwersytet Marii Curie-Sklodowskiej, Lublin (Poland). Inst. Fizyki
- 2. Joint Inst. for Nuclear Research, Dubna (USSR)
Description
Using Rutherford backscattering spectrometry (RBS) implanted Sb-Si systems are analysed. The Sb-Si structures are prepared by evaporation of a 94 nm Sb thin film on the (100)Si substrate. The samples are submitted to an implantation with 90 keV Ar, 180 keV Kr, and 300 keV Xe ions and a dose ranging from 1015 to 1016 ions/cm2. The depth distribution of Sb and Si atom concentration is obtained using computer simulation of the RBS spectra. The composition and the thickness of the intermixed layers are determined. The assistance of sputtering is observed and discussed. (author)
Additional details
Publishing Information
- Journal Title
- Physica Status Solidi A
- Journal Volume
- 112
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- 743-746
- ISSN
- 0031-8965
- CODEN
- PSSAB
Conference
- Title
- International conference on ion implantation in semiconductor and other materials.
- Dates
- 12-17 Sep 1988.
- Place
- Lublin (Poland).
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 20073361
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANTIMONY; ANTIMONY ALLOYS; ARGON 40 BEAMS; CHEMICAL PREPARATION; ION BEAMS; ION IMPLANTATION; KEV RANGE 100-1000; KRYPTON ISOTOPES; LAYERS; MIXING; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RUTHERFORD SCATTERING; SILICIDES; SILICON; SPUTTERING; VAPOR DEPOSITED COATINGS; XENON ISOTOPES
- Descriptors DEC
- ALLOYS; BEAMS; COATINGS; ELASTIC SCATTERING; ELEMENTS; ENERGY RANGE; KEV RANGE; METALS; RADIATION EFFECTS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; SYNTHESIS