Published August 1974 | Version v1
Report Metadata-only

Radiation effects in implanted silicon by means of thermally stimulated currents

Creators

  • 1. Friedrich-Schiller-Universitaet, Jena (German Democratic Republic). Sektion Physik

Description

no abstract available

Part of:
Radiation effects in silicon crystals implanted by argon and phosphorus

Additional details

Additional titles

Original title (German)
Untersuchung von Strahlenscaeden in ionenimplantiertem Silizium durch thermisch stimulierte Stroeme

Publishing Information

Imprint Title
Annual report 1974
Imprint Pagination
p. 115-116.
Report number
ZfK--283

INIS

Country of Publication
German Democratic Republic
Country of Input or Organization
German Democratic Republic
INIS RN
7229675
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
ANNEALING; BORON IONS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE DEPENDENCE
Descriptors DEC
ATOMIC IONS; CHARGED PARTICLES; ELEMENTS; HEAT TREATMENTS; IONS; RADIATION EFFECTS; SEMIMETALS

Optional Information

Notes
Published in summary form only. Imprint:Gemeinsamer Jahresbericht 1974.