Published December 1996 | Version v1
Journal article

Thermally activated escape from the zero-voltage state in long Josephson junctions

  • 1. Istituto di Elettronica dello Stato Solido, CNR, via Cineto Romano 42, I-00156 Roma (Italy)
  • 2. Dipartimento di Fisica, Universita di Roma ''La Sapienza'', P.le Aldo Moro 5, I-00185 Roma (Italy)
  • 3. Dipartimento di Energetica, Universita dell'Aquila, Monteluco di Roio, I-67040 L'Aquila (Italy)
  • 4. Dipartimento di Fisica, Universita di Roma Tor Vergata, I-00133 Roma (Italy)
  • 5. National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80303 (United States)

Description

We have measured the rate of thermally induced escape from the zero-voltage state in long Josephson junctions of both overlap and in-line geometry as a function of applied magnetic field. The statistical distribution of switching currents is used to evaluate the escape rate and derive an activation energy ΔU for the process. Because long junctions correspond to the continuum limit of multidimensional systems, ΔU is in principle the difference in energy between stationary states in an infinite-dimensional potential. We obtain good agreement between calculated and measured activation energies for junctions with lengths a few times the Josephson penetration depth λJ. copyright 1996 The American Physical Society

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
54
Journal Issue
21
Journal Page Range
p. 15417-15428.
ISSN
0163-1829
CODEN
PRBMDO

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
28016920
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ACTIVATION ENERGY; ELECTRICAL PROPERTIES; JOSEPHSON JUNCTIONS; MAGNETIC FIELDS; MATHEMATICAL MODELS; TEMPERATURE DEPENDENCE
Descriptors DEC
ENERGY; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS