Published December 1996
| Version v1
Journal article
Thermally activated escape from the zero-voltage state in long Josephson junctions
Creators
- 1. Istituto di Elettronica dello Stato Solido, CNR, via Cineto Romano 42, I-00156 Roma (Italy)
- 2. Dipartimento di Fisica, Universita di Roma ''La Sapienza'', P.le Aldo Moro 5, I-00185 Roma (Italy)
- 3. Dipartimento di Energetica, Universita dell'Aquila, Monteluco di Roio, I-67040 L'Aquila (Italy)
- 4. Dipartimento di Fisica, Universita di Roma Tor Vergata, I-00133 Roma (Italy)
- 5. National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80303 (United States)
Description
We have measured the rate of thermally induced escape from the zero-voltage state in long Josephson junctions of both overlap and in-line geometry as a function of applied magnetic field. The statistical distribution of switching currents is used to evaluate the escape rate and derive an activation energy ΔU for the process. Because long junctions correspond to the continuum limit of multidimensional systems, ΔU is in principle the difference in energy between stationary states in an infinite-dimensional potential. We obtain good agreement between calculated and measured activation energies for junctions with lengths a few times the Josephson penetration depth λJ. copyright 1996 The American Physical Society
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 54
- Journal Issue
- 21
- Journal Page Range
- p. 15417-15428.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28016920
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ACTIVATION ENERGY; ELECTRICAL PROPERTIES; JOSEPHSON JUNCTIONS; MAGNETIC FIELDS; MATHEMATICAL MODELS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ENERGY; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS