Silicon sensor development for the ATLAS upgrade for SLHC

The accelerator upgrade of the large hadron collider (LHC) to super-LHC is foreseen around the year 2015. The upgrade is to increase the luminosity to 1035 cm-2 s-1 and to accumulate 3000 fb-1. To cope with the increased occupancy and fluence, the transition radiation tracker (TRT) will be replaced with silicon microstrip sensors, and the semiconductor tracker (SCT) with short-strip silicon microstrip sensors. Both the ATLAS Pixel and SCT communities need to develop new sensors to work to fluences of 1x1016 1-MeV-neq/cm2 and to 8x1014, respectively. Technologies being investigated include a '3D sensor' for the Pixel layers, and an 'n-in-p sensor' with high-voltage operation capability for the SCT. The 'n-in-p sensor' requires n-strip isolation with high onset voltage of microdischarge. We report here on new sensors with various n-strip isolation structures that have been designed and are being fabricated in the search for the best approach