Published May 1, 2021 | Version v1
Journal article

Controllable temporal spin splitter via δ-doping in parallel double δ-magnetic-barrier nanostructure

  • 1. College of Science, Guilin University of Technology, Guilin 541004 (China)

Description

We theoretically investigate the control of spin-polarized dwell time by δ-doping in a parallel double δ-magnetic-barrier nanostructure, which can be realized experimentally by depositing two asymmetric ferromagnetic stripes at the top and bottom of an InAs/AlxIn1−xAs heterostructure, respectively. Dwell time is still spin-polarized even if a δ-doping is included inside. Both the magnitude and the sign of the spin-polarized dwell time can be manipulated by changing the weight or position of δ-doping. Therefore, this nanostructure can be employed as a structurally controllable temporal spin splitter for spintronic device applications. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1361-6641/abec14

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
36
Journal Issue
5
Journal Page Range
[5 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53050756
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ASYMMETRY; CONTROL; DEPOSITS; INDIUM ARSENIDES; NANOSTRUCTURES; SPIN; SPIN ORIENTATION
Descriptors DEC
ANGULAR MOMENTUM; ARSENIC COMPOUNDS; ARSENIDES; INDIUM COMPOUNDS; ORIENTATION; PARTICLE PROPERTIES; PNICTIDES