Published July 1, 2006
| Version v1
Journal article
Synchrotron X-ray topography study of defects in epitaxial GaAs on high-quality Ge
Creators
- 1. Optoelectronics Laboratory, Helsinki University of Technology, PO Box 3500, FIN-02015 TKK (Finland)
- 2. Research Institute for Networks and Communications Engineering (RINCE), Dublin City University, Dublin 9 (Ireland)
- 3. Oxford Instruments Analytical Oy, PO Box 85, FI-02631 Espoo (Finland)
- 4. Science Payload and Advanced Concepts Office, ESA/ESTEC, 2200 AG, Noordwijk (Netherlands)
Description
Crystal defects of GaAs thin films deposited by metalorganic vapour phase epitaxy on high-quality Ge substrates are studied by synchrotron X-ray topography. The GaAs thin films were measured to have ∼500 dislocations cm-2, which is a similar number to what plain Ge substrates show. The dislocation densities measured are also smaller than, for instance, those of high-quality vapour pressure controlled Czochralski grown GaAs wafers, which typically have dislocation densities of ∼1500cm-2. The GaAs films grown on both sides of two-sided substrates display very good crystal quality throughout the sample
Additional details
Identifiers
- DOI
- 10.1016/j.nima.2006.01.066;
- PII
- S0168-9002(06)00149-5;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 563
- Journal Issue
- 1
- Journal Page Range
- p. 62-65
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 7. international workshop on radiation imaging detectors
- Acronym
- IWORID 2005
- Dates
- 4-7 Jul 2005
- Place
- Grenoble (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38034976
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTALS; DEFECTS; DENSITY; DISLOCATIONS; GALLIUM ARSENIDES; GERMANIUM; SUBSTRATES; SYNCHROTRONS; THIN FILMS; VAPOR PHASE EPITAXY; VAPOR PRESSURE; X RADIATION
- Descriptors DEC
- ACCELERATORS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; CYCLIC ACCELERATORS; ELECTROMAGNETIC RADIATION; ELEMENTS; EPITAXY; FILMS; GALLIUM COMPOUNDS; IONIZING RADIATIONS; LINE DEFECTS; METALS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; THERMODYNAMIC PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.