Published March 9, 2011
| Version v1
Journal article
Photo-induced magnetoresistance enhancement in manganite heterojunction at room temperature
- 1. State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing 102249 (China)
- 2. Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249 (China)
- 3. Department of Physics, Chinese University of Hong Kong (Hong Kong)
Description
The enhanced magnetoresistance (MR) effect has been discovered under laser illumination in the La2/3Ca1/3MnO3 film on the n-Si substrate at room temperature. The MR ratio dramatically increases from 0.54% to as large as 18% by irradiating with a 808 nm CW laser in 6.4 kOe magnetic field. Our results have potential applications to develop novel photo-magnetic functional devices operated at room temperature, and even possible multifunctional devices with tunable optical and magnetic properties.
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/44/9/095103Additional details
Identifiers
- DOI
- 10.1088/0022-3727/44/9/095103;
- PII
- S0022-3727(11)71152-4;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 44
- Journal Issue
- 9
- Journal Page Range
- [4 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43047186
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CALCIUM COMPOUNDS; EQUIPMENT; HETEROJUNCTIONS; ILLUMINANCE; LANTHANUM COMPOUNDS; LASERS; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETORESISTANCE; MANGANESE OXIDES; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; FILMS; MANGANESE COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS